Rare-Earth Doped GaN Phosphors: Growth, Properties and Fabrication of Electroluminescent Displays

摘要

The discovery of rare-earth-based visible emission from GaN doped with Er (green), Eu (red) and Tm (blue) light emission has led to the investigation of GaN:RE electroluminescent devices (ELD's). The direct, wide bandgap semiconductor GaN is known to be optically very robust, being able to efficiently emit intrinsic radiation under defect conditions which would normally prohibit it in other semiconductors. We have investigated the basic optoelectronic properties of RE-doped GaN, the wide spectral range possible with this material system and related multiple color applications.