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Low voltage TiO_2 varistors dopped with Ta_2O_5 and Cr_2O_3

机译:低压TiO2压敏电阻掺杂有Ta_2O_5和CR_2O_3

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Ta-Mn-Cr-doped TiO_2 varistors were investigated with the purpose to clarify the roles of the dopants over the electric properties. The structural and electrical properties were studied by using scanning electron microscopy (SEM),Ⅰ―Ⅴmeasurements and x―ray diffraction (XRD). The varistors sintered at 1400°C for 2h in air presented density values about 95% of the theoretical density. From the experimental results, it was observed that an optimum addition of Ta_2O_5 (> 0,05 mol %) leads to an improvement of the electrical characteristics, presenting a low breakdown voltage (0,15― 0,3 V per grain boundary). The non― linearity coefficient increased from 2,6 to 8 as Cr_2O_3 was added and a low voltage (0,16 V per grain boundary) was observed. X-ray diffraction analyses showed the crystalline TiO_2 rutile phase without no other phases. Therefore, low voltage Ta― Mn-Cr doped TiO_2 varistors can be produced after adequate addition of Ta_2O_5 and Cr_2O_3 with excellent varsitors properties.
机译:研究了TA-MN-CR掺杂的TiO_2压敏电阻,目的是阐明掺杂剂对电性能的作用。通过使用扫描电子显微镜(SEM),Ⅰ-εmeasurement和X射线衍射(XRD)研究了结构和电性能。压敏电阻在1400℃下烧结在空气中呈现密度值约为95%的理论密度。从实验结果中,观察到,最佳地添加Ta_2O_5(> 0.05mol%)导致电特性的改善,呈现低击穿电压(每晶边界0.15-0,3 V)。非线性系数从加入Cr_2O_3增加了2,6至8,并且观察到低电压(每晶界限0.16V)。 X射线衍射分析显示结晶TiO_2金红石相而没有其他相。因此,低压Ta-Mn-Cr掺杂的TiO_2压敏电阻可以在足够的Ta_2O_5和CR_2O_3具有优异的过滤器性质之后生产。

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