1.54-μm Spontaneous and Stimulated Emission of Er-20 Centers in GaAs: Experiments and Modeling

摘要

Low-temperature photoluminescence of epitaxial GaAs codoped with erbium and oxygen is investigated. Samples are prepared by low-pressure organometallic vapor phase epitaxy at optimized growth conditions providing formation of Er2O luminescent centers. The low-temperature spectral bandwidth of the predominant emission line at 1538.1 nm is measured to be ～0.04 nm. The decay time of ～1.1 ms is measured for the Er-related emission at 77 K. Stimulated emission is identified at 77 K from gain measurements by variable-stripe-length method. The measured gain up to 45 cm~(-1) at pumping power density of 0.1 kW/cm~2. the model is presented that explains sublinear power dependence of the Er-related spontaneous luminescence.