New iodide method for growth of GaN

摘要

A new method, Iodine Vapor Phase Growth (IVPG), of growing GaN films and small single crystals by using elemental iodine instead of HCl has been developed. Elemental iodine was used to transport gallium metal into the reaction zone where the gallium iodide reacts with ammonia to produce GaN. GaN films were grown on sapphire substrates having a MOCVD template layer. Films with mobility as high as 660 cm{sup}2/Vs with carrier concentrations in the range of n= 5×10{sup}16 to 3×10{sup}17 cm{sup}(-3) have been grown in a temperature range of 1000 to 1110°C.