Impact of Pre-Amorphization for the Reduction of Contact Resistance Using Laser Thermal Process

摘要

In this paper, for the first time, we report the effect of pre-amorphization for the reduction of contact resistance of CoSi{sub}2-Si using Laser Thermal Process (LTP). Owing to the lower melting point of pre-amorphized Si, we can achieve much lower contact resistance in the lower laser power conditions. And the larger junction leakage current and junction capacitance can be much reduced by combining pre-doping and pre-RTA technique with LTP.