SIMULATION OF GaAs MESFET DEVICES USING TCAD TOOLS

摘要

This paper looks at the process advancements in GaAs device fabrication and offers insights into the design of the device and their characteristics with the use of Technology Computer Aided Design(TCAD) tools. Two main simulators, ATHENA - a process simulator and ATLAS - a device simulator are used together with the VWF tools. GaAs MESFET structure is prepared according to the conventional processing techniques using ATHENA. The DC and AC characteristics of GaAs MESFET are then simulated using ATLAS.