首页> 外文会议>Society of Photo-Optical Instrumentation Engineers Conference on Metrology, Inspection, and Process Control for Microlithography >Feature-shape and Line-edge Roughness Measurement of Deep sub-micron Lithographic Structures using Small-angle Neutron Scattering
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Feature-shape and Line-edge Roughness Measurement of Deep sub-micron Lithographic Structures using Small-angle Neutron Scattering

机译:使用小角中子散射的深层微米光刻结构的特征形状和线边粗糙度测量

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We demonstrate the application of small angle neutron scattering (SANS) measurements for the quick, nondestructive, and quantitative measurement of the feature shape and size and line-edge roughness of lithographically prepared structures using a model photoresist pattern consisting of a periodic grating of 0.15μm lines. The measurements are performed directly on structures as fabricated on a silicon wafer with no other sample preparation. For well-defined patterns placed normal to the neutron beam, we easily observe up to six orders of diffraction peaks. Analytic expressions from standard small angle scattering formalism are sued to extract the average line structure, spacing, and line-edge roughness from the peak positions and intensities. Additional structural information is obtained by tilting the pattern relative to the incident beam. Changes in the observed scattering data as a function of the tilting angle are related to characteristics such as the height of the structures and the symmetry of the line shape.
机译:我们使用模型光致抗蚀剂图案构成了0.15μm的周期光栅的模型光致抗蚀剂图案,证明了小角度中子散射(SAN)测量的快速,非破坏性和定量测量的快速,非破坏性和定量测量的光谱制备的结构的尺寸和线边缘粗糙度。线条。测量直接在硅晶片上制造的结构上进行,没有其他样品制备。对于垂直于中子束的明确定义图案,我们可以轻松观察到最多六个衍射峰。来自标准小角度散射形式主义的分析表达式被起诉从峰值位置和强度提取平均线结构,间隔和线边粗糙度。通过相对于入射光光束倾斜图案来获得附加结构信息。观察到的散射数据的变化作为倾斜角的函数与诸如结构高度的特性和线形状的对称性有关。

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