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A low-power UHF RF frontend for a low-IF receiver

机译:低功耗UHF RF前端,用于低频接收器

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A low-power 435 MHz RF front end was implemented in a 0.5 /spl mu/m CMOS process that is intended for use in a low-power low-IF receiver under development for deep space communication. The RF front end includes a differential low-noise amplifier (LNA) with on-chip spiral inductors and a doubly balanced mixer which downconverts the LNA output to 2 MHz IF. The front end has a simulated noise figure of 3.8 dB, input 1-dB compression point of -42 dBm, input third-order intercept point of -34 dBm, and conversion gain of 54 dB. Total power dissipation is 15 mW. The area occupied by the chip is 1.3 mm /spl times/ 1.9 mm.
机译:低功率435MHz RF前端在0.5 / SPL MU / M CMOS工艺中实现,该过程用于在开发的低功率低电平接收器中用于深度空间通信。 RF前端包括带有片上螺旋电感器的差分低噪声放大器(LNA)和双重平衡混合器,如果如果,则将LNA输出到2 MHz。前端具有3.8 dB的模拟噪声系数,输入1-dB压缩点-42 dBm,输入三阶截距-34 dBm,以及54 dB的转换增益。总功耗为15兆瓦。芯片占用的面积为1.3 mm / spl时间/ 1.9 mm。

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