Phototransceiver arrays with phototransistors and resonant cavity light emitting diodes vertically integrated with tunnel junctions

摘要

For large-scale parallel optical interconnects and image sensor applications, it is necessary to develop phototransceivers with high sensitivity, low power dissipation and compact size [I]. A densely packed, two dimensional array of phototransceivers which can detect, process and transmit information with high sensitivity and efficiency, low power dissipation and compact size, would be an important component in imaging, sensing and information transfer applications [2]. We report here GaAs-based low power phototransceivers and phototransceiver arrays with vertically integrated resonant cavity LEDs (RCLEDs) and heterojunction phototransistors (HPTs). A novel integration scheme, based on a tunnel junction (TJ) [3] ensures the simple processing, compact size and excellent performance of the arrays.