Growth of Ru and RuO_2 films by metal-organic chemical vapour deposition

摘要

We have prepared RuO_2 layers by metal organic chemical vapour deposition using liquid delivery source and by thermal evaporation of powder precursors. The films were prepared on silicon and r-plane cut sapphire substrates. We discuss thermodynamics of both types of MOCVD techniques. Liquid delivery source technique using diglyme solvent results in deposition of metallic Ru film with some traces of RuO_2, while films prepared by thermal evaporation of powder precursors consist of pure RuO_2 phase. Thermal evaporation MOCVD grown RuO_2 films exhibit excellent electrical properties; room temperature resistivity of 30μΩcm and residual resistivity ratio between 8 and 30.