PZT ultrathin films with film thickness of 90 nm were prepared by the sol-gel method. By using modified sol-gel solutions, 90 nm-thick PZT films with good surface morphology were obtained even on Pt/SiO/sub 2//Si substrates, in which nothing worked as a seeding layer. The obtained PZT films with various compositions were evaluated. Use of the modified solutions made it possible to make the film thinner without degradation of the properties. P-E hysteresis curves for PZT(30/70) films with film thickness of 90 nm were saturated at about 1 V and the Pr was 28 /spl mu/C/cm/sup 2/. As a result, PZT thin films from the modified solution exhibited potential for low voltage drive FeRAM applications.
展开▼
机译：通过溶胶 - 凝胶法制备具有膜厚度为90nm的PZT超薄薄膜。通过使用改性溶胶 - 凝胶溶液，即使在Pt / SiO / Sub 2 // Si衬底上也获得了具有良好表面形态的90nm厚的PZT薄膜，其中没有作为播种层的工作。评价所获得的具有各种组合物的PZT薄膜。使用改性溶液使得可以使薄膜更薄而不会降低性质。 P-E滞后曲线（30/70）膜厚度为90nm的薄膜在约1V时饱和，PR为28 / SPL mu / c / cm / sup 2 /。结果，来自改性解决方案的PZT薄膜表现出低压驱动Feram应用的潜力。
展开▼
