Preparation and characterization of ferroelectric YMnO/sub 3/ thin film

摘要

Preferential (0004) oriented ferroelectric YMnO/sub 3/ thin films were prepared on Si substrates using inorganic precursors by sol-gel method. x-ray diffraction (XRD) measurement was used to find out suitable processing temperature. A 0.4 volt C-V window was obtained for the MFS structure at room temperature. And a wider C-V window of 0.8 volt was obtained at 200 K. Also Rutherford Backscattering Spectrometry (RBS) and AFM were used to characterize the films.