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Domain structure and residual-strain characterization of epitaxial Pb(Zr/sub x/Ti/sub 1-x/)O/sub 3/ thin films

机译:外延Pb的域结构和残留菌株表征(Zr / sub x / ti / sub 1-x /)o / sub 3 /薄膜

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Epitaxially grown [001], [101] and [111]-oriented tetragonal Pb(Zr/sub x/Ti/sub 1-x/)O/sub 3/ (PZT) thin films were prepared on [001], [110] and [111] SrTiO/sub 3/ substrates, respectively Growth domain configuration and lattice parameters were characterized using high resolution X-ray reciprocal space mapping measurement. In [001]-oriented PZT case, well-known c-domain and a-domain were observed. In other orientation case, [101] mixed with [110]-oriented PZT and [111] with small angle tilt orientation were observed for [110] and [111] SrTiO/sub 3/ substrates, respectively. Moreover, lattice parameters characterization showed almost fully growth strain relaxation at room temperature.
机译:外延生长在[001],[101]和[111] - 在[001]上制备了oriented四字节Pb(Zr / sub x / Ti / sub 1-x /)o / sub 3 /(pzt)薄膜,[110 [111] SRTIO / SUB 3 /衬底,分别使用高分辨率X射线互易空间映射测量来表征生长域配置和晶格参数。在[001]中,观察到众所周知的C-结构域和A结构域。在其他定向壳中,与[110] - 剂量的PZT和[111]混合,分别为[110]和[111] SRTIO / SUB 3 /衬底分别观察到具有小角度倾斜取向的[111]。此外,晶格参数表征在室温下几乎完全生长应变松弛。

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