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Residual stresses in the electrode of Pt/Ti for the thermal detector with thin-film structure

机译:具有薄膜结构的热检测器的PT / TI电极中的残余应力

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Residual stress of Pt/Ti thin film electrode was investigated as a function of substrate temperature by using of XRD and SEM. In order to develop the residual stress, stress sensitive structures of Pt/Ti thin film on SiO/sub 2//Si(substrate) were fabricated. Thermally induced residual stress, which was originated in the different thermal expansion coefficients between film and substrate, was led to the dimensional change of overall structure. XRD results confirmed the existence of internal stresses on Pt/Ti thin film.
机译:通过使用XRD和SEM作为底物温度的函数研究了Pt / Ti薄膜电极的残余应力。为了开发残余应力,制造了SiO / Sub 2 // Si(衬底)上的Pt / Ti薄膜的应力敏感结构。热诱导的残余应力起源于薄膜和基板之间的不同热膨胀系数,导致整体结构的尺寸变化。 XRD结果证实存在于PT / TI薄膜上的内部应力。

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