This paper details work demonstrating the effect of athermal mechanisms involving optical and microwave illumination on the flux of dopants in ultra-shallow doped Si layers. Optical illumination has a significant, yet transient, effect on the formation of ultra-shallow junctions in B doped Si. Rapid thermal annealing was performed on both B-only and BF{sub}2 implanted silicon samples. During microwave annealing, the optically illuminated samples illustrated a greater amount of B diffusion with respect to the non-illuminated samples for the B-only implanted Si, while the reverse was true for the BF{sub}2 implanted samples. In addition to a deeper junction depth, the illuminated samples had a lower sheet resistance. Both illuminated and non-illuminated samples fall on the same Rs-Xj curve, indicating a shift in optimal anneal temperature and not an improvement in junction formation. The relative difference in the diffusion depth of B between the illuminated and non-illuminated samples was dependent on the oxygen concentration in the ambient during the anneal.
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