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A Transmission Electron Microscopy Study of Dislocation Substructures in PLD-grown Epitaxial Films of (Ba,Sr)TiO_3 on (001) LaAlO_3

机译:(001)Laalo_3(001)LAALO_3(BA,SR)TiO_3的PLD生长外延薄膜中位错子结构的透射电子显微镜研究

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Epitaxial Ba_(0.6)Sr_(0.4)TiO_3 films were grown onto (001) LaAlO_3 by pulsed-laser deposition, and the dislocation structures of the films were investigated using transmission electron microscopy. Misfit dislocations with a periodicity of about 7 nm and Burgers vectors b = a<100> were observed at the interface. High densities of threading dislocations was present in the films with Burgers vector b = a<100>. The observations reveal that threading dislocations are not generated as the result of half-loop climb from the deposit surface as proposed previously, but are instead formed when misfit dislocations are forced away from the interface during island coalescence.
机译:通过脉冲激光沉积将外延Ba_(0.6)Sr_(0.6)Sr_(0.4)TiO_3膜生长在(001)LaAlO_3上,并使用透射电子显微镜研究薄膜的位错结构。在界面中观察到具有约7nm和汉堡载体B = <100>的周期性的错配脱位。汉克载体B = <100>的薄膜中存在穿线脱位的高密度。观察结果表明,由于先前提出的沉积物表面的半回路爬升的结果,而不是从沉积物表面的结果产生的螺纹脱位,而是在岛聚结期间从界面被迫离开界面时形成。

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