Investigation of molecular co-doping for low ionization energy p-type centers in (Ga,Al)N

摘要

This work initiates an investigation of molecular co-doping to produce p-type centers in (Ga, Al)N with ionization energies lower than Mg. Dopant complexes can be formed between a doubly ionized acceptor such as (Cu, Li or Ag) and a singly ionized donor (silicon). Ion implantation of Cu, Li and Ag into silicon doped GaN films grown by Metalorganic Chemical Vapor Deposition (MOCVD) has been performed. Secondary ion mass spectroscopy (SIMS) data confirmed the simulated depth profile. High resolution X-ray diffraction and Raman spectroscopy were used to characterize the crystalline damage and subsequent recovery upon anneal. A complete recovery was observed after high temperature (700-900°C) annealing. Low temperature (6K) photoluminescence (PL) for Cu-implanted GaN showed bands identified with crystalline lattice damage due to the Cu-implantation. The annealed samples showed recovery of standard crystalline GaN features. Additional donor-acceptor pair features are observed below 3.35 eV indicating the existence of an acceptor state.