EFFECTIVE P-TYPE DOPANT AND RHENIUM OXIDE FOR OVERCOMING S-TYPE CURRENT-VOLTAGE GRAPH IN ORGANIC PHOTOVOLTAIC CELL USING ELECTRON DONOR WITH LOW HIGHEST OCCUPIED MOLECULAR ORBITAL ENERGY LEVEL

摘要

Provided are a first electrode, a first hole transport layer that is formed on the first electrode and has a p-type dopant contained in a first hole transport material, a second hole transport layer that is formed on the first hole transport layer, a photoactive layer that is formed on the second hole transport layer and has a donor layer and an acceptor layer, and an organic photovoltaic cell that has a second electrode which is formed on the photoactive layer, in which the highest occupied molecular orbital energy level of the donor layer is -5.6 eV or less, the highest occupied molecular orbital energy level of the second hole transport layer is higher than the highest occupied molecular orbital energy level of the donor layer by 0 or 0.1 eV, and a Fermi level of the p-type dopant is lower than a highest occupied molecular orbital energy level of the first hole transport material.