New Pt/(Bi, La)_4Ti_3O_12/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memories by the Sol-Gel Method

摘要

The well c-axis-oriented Bi_3.25La_0.75Ti_3O_12 films with good crystallinity and good surface morphology were obtained at temperatures higher than 600 deg C. It was also found in a Pt/100nm-Bi_3.25La_0.75Ti_3O_12 / 3nm-Si_3N_4 / Si (metal / ferroelectric / insulator / semiconductor) structure that C-V characteristics showed a hysteresis loop with a memory window of about 1V and both the high and low capacitance values kept at zero bias voltage did not change for more than 3 hours.