Determining the Ratio of the Precipitated versus Substituted Arsenic by XAFS and SIMS in Heavy Dose Arsenic Implants in Silicon

摘要

Doping silicon with arsenic by ion implantation above the solid solubility level leads to As clusters and/or precipitaes in the form of monoclinic SiAs causing electrical deactivation of the dopant.Information on the local structure around the As atom,and the As concentration depth profiles is important for the implantation and annealing process in order to reduce the precipiated As and maximize the electrically activated As.