OXIDATION TEST APPLICATION FOR CHEMICAL - MECHANICAL POLISHED (CMP) SILICON WAFERS QUALITY CONTROL

摘要

The method of silicon wafers sectioning and processing before the oxidation test has been proposed. This method allows to separate influence of single crystal vacancy type defects and CMP-induced defects on the total OISF density. The origin of CMP silicon wafers residual damages has been discussed. The transformation during heating and these defects' role as OISF generation centers have been also discussed.