CHRACTERIZATION OF NOVEL POST Cu CMP CLEANERS USING Cu CONTAMINATED INTERLAYER DIELECTRICS

摘要

During the implementation of Cu dual damascene processes, the removal of Cu contamination caused by Cu CMP process from the surface of the ILD would be a key to a successful process. Few papers have been published that describe the cleaning of Cu-contaminated ILD surfaces. This paper describes results of a series of experiments testing Cu cleaning abilities of two novel post Cu CMP cleaners. These experiments compare the Cu removal efficiency of these chemicals to a conventional post Cu CMP cleaner (oxalic acid) using various ILDs. From this investigation, it can be concluded that the Cu removal efficiency from the surface of the various ILDs by the novel post Cu CMP cleaner CLN-EP3 showed a significant improvement on that of oxalic acid. Furthermore, with CLN-EP3 Cu contamination at the surface of ILD would be less than 10~(10) atoms/cm~2.