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Monolithic and quasimonolithic MM-wave modules and devices

机译:单片和Quimonolithic MM波模块和器件

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The progress in mm-wave technology is associated with appearance of monolithic integrated circuits replacing hybrid integrated circuits. As soon as in the middle 80-s considerable results were achieved in this field [1]. Monolithic design using microstrip transmission lines had been spread on balanced mixers, frequency multipliers, low-noise IF and power amplifiers, phase shifters and so on. In the Scientific Research Institute of Semiconductor Devices (ISD), first attempts to create monolithic mm-wave circuits are related to early 80-s, and at the end of the decade the commercial balanced mixers (BM) based on monolithic technique - monolithic balanced mixers (MBM) - had been worked out for 3-mm and 2-mm wavebands [2]. Design principles of said MBMs were similar to those of fin-line devices [3], monolithic circuit being mounted longitudinally in a waveguide E-plane. However, there had been substantial distinctions, consisting in placing the MIC direr +1.y across the waveguide instead of mounting it into the finline gap. Later, the same principles had been applied for monolithic detectors, multipliers, modulators, limiters etc. In common, general enough technical feature had come around, applicable for a variety of monolithic mm-wave circuits as well as for RF devices based upon them.
机译:MM波技术的进展与更换混合集成电路的单片集成电路的外观相关。一旦在中间80-S的相当大的结果,在该领域实现了[1]。单片设计采用微带传输线的均衡混频器,频率倍增器,低噪声IF和功率放大器,相移器等。在科学研究所(ISD)中,首先创建单片MM波电路的尝试与80-s初期相关,并且在十年末端基于单片技术的商业平衡混合器(BM) - 单片平衡混合器(MBM) - 已经为3毫米和2毫米的波带工作过[2]。所述MBM的设计原理类似于Fin-Line器件[3]的设计原理,单片电路在波导E-平面中纵向安装。然而,存在显着的区别,包括将MIC DIRER + 1.y在波导上,而不是将其安装到芬兰间隙中。后来,相同的原则已经应用了整体探测器,乘法器,调制器,限制器等。共同,一般的技术功能已经存在,适用于各种整体MM波电路以及基于它们的RF器件。

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