Multilayer strained Si-SiGe structures: fabrication problems, interface characteristics, and physical properties

摘要

The objectives of this investigation are structural and physical characteristics of the n-Si_(1-x)Ge_x/n(p)-Si heterojunction under strong elastic deformation of Si_(1-x)Ge_x layers which gives rise to misfit dislocations in the heteroboundary region; the factors playing the main role in formation of the band structure of the system; the use of transmission electron microscopy and optical methods for determination of the phenomena connected with misfit dislocations in the grown epitaxial structure; the electrical characteristics of diode structures and the process of electron-hole recombination via dislocation states in a heterojunction.