Modelling of Crystal Growth for Sputtered Layers by Molecular Dynamics

摘要

The authors are working on a simulation tool for sputtered coatings on the basis of molecular dynamics leading to a direct correlation of atomistic indicators with determinable mesoscopic layer characteristics. The aim is to compute the material properties of the layer-substrate system and its behaviour within the coating process. The data derived from the molecular-dynamic simulation process will be used to describe the layer growth process and will be compared with real measurement results. Long-term target is to apply the molecular-dynamic simulation for specific layer engineering.