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Fabrication and optical properties of sol-gel derived interference coating for high power laser applications

机译:高功率激光应用溶胶 - 凝胶衍生干涉涂层的制造和光学性能

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A single layer sol-gel derived TiO_2 thin films and 6 periods SiO_2/TiO_2 multilayer coating were designed and prepared on GaAs substrates as anti-reflection coating or near-infrared-reflective coating for high power semiconductor laser applications. Crack free TiO_2 thin films having thickness of 80-150 nm, and refractive indices of 1.8~2.1 have been obtained by simply sol-gel method upon heating at different temperatures. The obtained TiO_2 thin films on GaAs substrates have shown reflectance of ≤1% in the wavelength of about 808 nm. Thin films of TiO-2 and SiO_2 were also used to fabricate near infrared reflector on GaAs substrates. The reflector consisted of 6 SiO_2/Tio_2 bi-layers, designed with a high-reflective band in the wavelength of 1064 nm. A minimum transmittance of ≤2% in the wavelength range between 950 and 1100 nm has been obtained in the present multiplayer SiO_2/TiO_2 coating.
机译:设计并在GaAs基板上设计并制备单层溶胶 - 凝胶衍生的TiO_2薄膜和6个时段SiO_2 / TiO_2多层涂层作为用于高功率半导体激光器应用的抗反射涂层或近红外反射涂层。在不同温度下加热时,通过简单地通过溶胶 - 凝胶法在加热时获得厚度为80-150nm的裂缝自由TiO_2薄膜,并通过简单地获得1.8〜2.1的折射率。在GaAs基材上获得的TiO_2薄膜在约808nm的波长中示出了≤1%的反射率。 TiO-2和SiO_2的薄膜也用于制造在GaAs基材上的近红外反射器。反射器由6个SiO_2 / TiO_2双层组成,设计在波长为1064nm的高反射带。在本多污染率SiO_2 / TiO_2涂层中获得了950和1100nm之间的波长范围内的最小透射率≤2%。

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