Exact inductive parasitic extraction for analysis of IGBT parallel switching including DCB-backside eddy currents

摘要

This paper deals with the parallel switching process of IGBTs in a power module. It is shown experimentally and by simulation that eddy currents in the direct copper bonding (DCB) ceramics backside metallization have an important influence on switching behaviour. An effective simulation tool based on the partial element equivalent circuit (PEEC) method is used to extract all inductive couplings for circuit modeling.