首页> 外文会议>IEEE Annual Power Electronics Specialists Conference >A Resonant High Side Gate Driver for Low Voltage Applications
【24h】

A Resonant High Side Gate Driver for Low Voltage Applications

机译:用于低压应用的谐振高侧栅极驱动器

获取原文

摘要

This paper aims to provide a practical insight intothe use of a novel resonant gate drive system to efficiently drive both the power switches in a switched mode power supply, without the requirement for level shifting or bootstrapping circuitry. At present there are two popular methods to drive high side N-channel devices in low voltage applications. The circuit presented here overcomes the limitations of these solutions without a part number proliferation. The theoretical characteristics of the topology are examined in a detailed mathematical analysis suite. Simulation and experimental results emphasize the advantages of the proposed topology.
机译:本文旨在提供一种实用的洞察力,可以使用一种新型谐振栅极驱动系统,以有效地驱动开关模式电源中的两个功率开关,而无需电平移位或自举电路。目前有两个流行的方法在低压应用中驱动高侧N沟道器件。介绍的电路克服了这些解决方案的局限性而没有部件数量增殖。在详细的数学分析套件中检查了拓扑的理论特征。仿真和实验结果强调了拓扑的优势。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号