A comprehensive DC/RF tunnel diode model and its application to simulate HITFET's (Heterostructure integrated tunneling FET's) and quantum-MMIC's

摘要

A comprehensive tunnel diode large signal model that incorporates the bias voltage dependence of its RF characteristics is developed. The model consists of a voltage controlled current source and is implemented in the Advanced Design System (ADS) simulation tool. This model is applied to simulate Heterostructure Integrated Tunneling Field Effect Transistor (HITFET) devices and circuits. HITFET's are quantum functional devices realized by monolithically integrating tunnel diodes and FET's. The enhanced functionality of a HITFET is utilized to design novel circuits with reduced complexity and size and having better performance. Many HITFET based circuits, such as voltage controlled oscillators, amplifiers, mixers, and antennas have been proposed and demonstrated. This new technology shows promise for portable communication applications and Monolithic Microwave Integrated Circuits (MMIC's). This large signal model incorporated in ADS enables designers to simulate monolithic, multifunctional IC's containing tunnel diodes and HITFET's.