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Acoustic behavior and elastic properties of amorphous SiN_x film studied by surface brillouin scattering

机译:表面布里渊散射研究非晶Sin_x膜的声学行为和弹性性质

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Amorphous silicon nitride (SiN_x) has been studied in recent years with a view to various applications in the microelectronics industry as well as in surface acoustic wave (SAW) devices, such as resonators, filters, and delay lines with electronic circuity on semiconductor substrates. The properties of these SiN_x films remain uninvestigated, owing to the small value of the film thicknesses. Hickernell et al. used interidigital transducer (IDT) structure to study the SiN_x film on GaAs substrate, where only Rayleigh surface acoustic wave (SAW) was detected. In this report, we investigate the acoustic wave behavior and elastic properties of two SiN_x films of 600 nm with different densities (Sample A, 2.84 g/cm~3, and B, 2.53 g/cm~3) on silicon substrate by the surface Brillouin scattering (SBS) technique. We report the behavior not only for the Rayleigh SAW but for the Sezawa, pseudo-Sezawa and longitudinal guided waves as well. Observations of these modes allow extraction of all elastic constants of the film and, hence, discussion the effects of the film density on the various acoustic modes and elastic properties of the films.
机译:近年来已经研究了非晶硅氮化硅(SIN_X),以微电子工业的各种应用以及在半导体基板上的谐振器,滤波器和延迟线等谐振器,滤波器和延迟线中的各种应用。由于膜厚度的少,这些SIN_X薄膜的性质保持不变。 HICKERNELL等人。使用了使用的互动传感器(IDT)结构研究GaAs衬底上的SIN_X膜,其中仅检测到瑞利表面声波(SAW)。在本报告中,我们研究了600nm的两个SIN_X薄膜的声波行为和弹性特性,在表面上用不同的密度(样品A,2.84g / cm〜3和B,2.53g / cm〜3)进行硅基板布里渊散射(SBS)技术。我们不仅为瑞利锯报告的行为,而且为Sezawa,伪Sezawa和纵向引导的波浪报告。这些模式的观察允许提取膜的所有弹性常数,从而讨论膜密度对膜的各种声学模式和弹性性质的影响。

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