A Novel Odd-Even Switch Structure Design of CMOS Snapshot Readout for Focal Plane Array

摘要

A novel CMOS readout structure for focal-plane array (FPA) is presented in this paper. Using only three transistors per pixel without the reset PMOS transistor, high fill-factor of 80percent with pixel size of 50x50mum~2 and charge storage capacity of 15.3pC can be obtained. Moreover, combined with the odd-even switching readout structure, the charge amplifier stage and the off-pixel-reset method are utilized to improve the noise and speed performance of the readout structure. Hspice simulation results show that the new structure can achieve good readout performance, such as high charge capacity and low power consumption.