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Systematic procedure for load-pull X-parameters measurements for high-efficiency GaN HEMT PA design

机译:用于高效GaN HEMT PA设计的负载 - 拉X参数测量的系统工序

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In this paper, the X-parameters load-pull measurements for high-efficiency multi-band power amplifier design are described. A commercially available 10 W Cree CGH40010F GaN HEMT is used for characterization at three harmonics of the typical telecommunication frequencies: 1.8 GHz, 2.1 GHz, 2.45 GHz, and 2.7 GHz. The measurement setup and procedure are described. Special attention is being paid to the calibration methods in order to ensure the validity of the X-parameters. Using load-dependent X-parameters the optimal large signal operating point for each fundamental frequency was found. For all the bands output power over 10 W and power-added efficiency over 70 % were obtained.
机译:在本文中,描述了高效多频带功率放大器设计的X参数负载拉动测量。可商购的10 W CREE CGH40010F GaN HEMT用于典型电信频率的三个谐波的表征:1.8 GHz,2.1 GHz,2.45 GHz和2.7 GHz。描述了测量设置和过程。为了确保X参数的有效性,正在支付特别注意。使用负载相关的X参数,找到了每个基频的最佳大信号操作点。对于所有频段输出功率超过10 W和功率增加70%以上。

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