Large-signal analysis of p-type GaAs IMPATT diode

摘要

This paper presents a detailed study of p-type GaAs IMPATT diodes. This is important in order to obtain better insight into the operation of this diode type, which is not sufficiently studied. Hence, it is possible to design and optimize the structure of the double-drift GaAs IMPATT and the circuit where this IMPATT is embedded. Some important conclusions concerning the effect of the peak value of the microwave signal on IMPATT operation are drawn.