Voltage-influence of biased interconnection line on integrated circuit-internal current contrast measurements via magnetic force microscopy

摘要

A magnetic force microscopy (MFM) based current contrast imaging (CCI) test-system is a promising tool for advanced contactless circuit internal function and failure analysis of integrated circuits (IC). Contactless current images of 2μm wide interconnection lines with currents down to 1μA were already demonstrated by this technique. Latest measurements in ICs have shown a voltage influence of biased interconnection lines on IC-internal current measurements. Up to now this influence has not been investigated. Therefore, this paper deals with experimental investigations on this influence. A simple model was developed, allowing an interpretation of the experimental results.