Influence of erosion and dishing during Cu-CMP on electrical performance

摘要

The introduction of copper for advanced processes in a dual damascene approach requires a very critical Cu-CMP step. Since different materials are polished dishing and erosion are introduced. In this paper we will show that erosion and dishing are increasing with polishing time, and that the pattern density has a large influence on the final topography. Profilometer measurements allow explaining the influence on electrical performance.