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A 20MHz monolithic DC-DC converter manufactured with the first commercially viable silicon magnetics technology

机译:一种20MHz单片DC-DC转换器,采用第一种商业可行的硅磁性技术制造

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This paper presents a Power System on Chip (Power-SoC), switch-mode DC-DC synchronous buck converter with switching frequency of 20 MHz, which monolithically integrates high-speed power MOSFET switches, controller and drive circuits, the compensation network, and more importantly, a silicon-based inductor. The new device implements a type III voltage mode control scheme with wide loop bandwidth, which offers ultra-fast transient with tiny small ceramic capacitor and ultra-low ripple (> 8mV peak-peak). The compact design facilitates encapsulation in a 3×4.5×0.9 mm DFN package, while its high efficiency eliminates the necessity of a heat sink. The fully integrated design only requires input and output capacitors, and offers an excellent size and cost-effective alternative to a comparable LDO for high-speed transient and noise sensitive applications. The controller chip is fabricated in a standard 0.25µm CMOS process including high speed, high voltage LDMOS devices used for the integrated power switches. The proprietary magnetics-on-silicon inductor is implemented using a magnetic alloy on silicon die mounted on a substrate coil-in-package to achieve an ultrasmall solution. Performance results show that the new converter can provide up to 1000mA of continuous DC output current, at up to 90% peak efficiency in Pulse-Width-Modulation (PWM) mode. The device is in production with the first commercially viable silicon magnetics technology deployed in a standard foundry.
机译:本文介绍了芯片电源系统(Power-SoC),开关模式DC-DC同步降压转换器,开关频率为20 MHz,其单整体集成了高速功率MOSFET开关,控制器和驱动电路,补偿网络和更重要的是,基于硅基电感器。新设备实现了具有宽环带宽的III型电压模式控制方案,其提供超快速的短暂瞬态,带有微小的小陶瓷电容和超低纹波(> 8mV峰峰)。紧凑的设计有助于封装在3×4.5×0.9 mm DFN封装中,而其高效效率消除了散热器的必要性。完全集成的设计仅需要输入和输出电容,并提供出色的尺寸和具有成本效益的可比LDO,用于高速瞬态和噪声敏感应用。控制器芯片在标准的0.25μmCMOS工艺中制造,包括用于集成电源开关的高速,高压LDMOS器件。使用安装在基板线圈的硅模具上的硅模具上的磁性合金来实现专有的磁性电感器,以实现超自溶液。性能结果表明,新转换器可以提供多达1000mA的连续直流输出电流,脉冲宽度调制(PWM)模式高达90%的峰值效率。该器件采用了在标准铸造中部署的第一个商业可行的硅磁性技术生产。

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