High-pressure Self-propagating High-temperature Synthesis (SHS) of Cd-In-Ga-O powder for novel substrate used for gallium nitride based thin film growth

摘要

The Self-propagating High-temperature Synthesis (SHS) method was used for producing CdIn_(1.673)Ga_(0.327)O_4 complex oxide,a potential substrate for growing GaN thin film. The SHS process was conducted using two initial mixtures, Cd-In_2O_3-Ga_2O_3, and Cd-In-Ga_2O_3 reaching combustion temperatures of 837 °C and 1,400 °C, respectively. The combination of these mixtures enabled us to carry out the synthesis below the sublimation temperature of the desired product (≈1,100 °C) and to increase its yield.Post-treatment increased the homogeneity of the product. The product after sintering had a lattice constant of 9.12 A. A high-pressure SHS process was developed to produce a product of a lattice constant of 9.04 A in less than a minute.