Becuase of its wide-gap property, along with the mechanical-and chemical stability, boron nitride has potential to applications for blue-light-emitting optical devices, radiationresistance high-power devices. As suual for wide-gp semiconductors, a problem of this material is lack of a high-quality valence control. A recent success in the valence control of GaN has stimulated a simular interest in other wide-gap semiconductors. From the theoretical side, an idea of co-doping has been proposed by one of the authors for an efficient method of valence control. It has gradually been reconized the usefulness of theoretical predictions based on the first-principles claucations for special combinations of acceptor and donor atoms for particular semiconductors. Accordingly, it is interesting to examine the idea of co-doping to a relatively less familiar material, boron nitride.
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