Ternary compound-semiconductor; CuInTe_2, film was deposited cathodically under potentiostatic conditions on titanium substrate from aqueous solution containing CuCl_2, InCl_3, TeO_2 and HCl in this study. The deposition parameters such as electrolytic solution composition, potential and temperature were optimized for electrodeposition of CuInTe_2. Structural characterization of the deposited film was also carried out using XRD and SEM. Electrodeposited films were prepared and analyzed for their chemical composition using ICP. The ICP analyses showed that the stoichiometry of the films could be controlled by (1) the deposition potential and/or by (2) the electrolytic bath composition.
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