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A performance comparison of contemporary DRAM architectures

机译:当代DRAM架构的性能比较

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In response to the growing gap between memory access time and processor speed, DRAM manufacturers have created several new DRAM architectures. This paper presents a simulation-based performance study of a representative group, each evaluated in a small system organization. These small-system organizations correspond to workstation-class computers and use on the order of IO DRAM chips. The study covers Fast Page Mode, Extended Data Out, Synchronous, Enhanced Synchronous, Synchronous Link, Rambus, and Direct Rambus designs. Our simulations reveal several things: (a) current advanced DRAM technologies are attacking the memory bandwidth problem but not the latency problem; (b) bus transmission speed will soon become a primary factor limiting memory-system performance; (c) the post-12 address stream still contains significant locality, though it varies from application to application; and (d) as we move to wider buses, row access time becomes more prominent, making it important to investigate techniques to exploit the available locality to decrease access time.
机译:为了响应内存访问时间和处理器速度之间的缺点,DRAM制造商创建了几个新的DRAM架构。本文介绍了一种基于模拟的代表组的性能研究,每组在一个小型系统组织中评估。这些小型系统组织对应于工作站级计算机,并在IO DRAM芯片的顺序上使用。该研究涵盖了快速的页面模式,扩展数据,同步,增强的同步,同步链路,Rambus和Direct Rambus Designs。我们的模拟显示了几件事:(a)当前的高级DRAM技术正在攻击内存带宽问题,但不是延迟问题; (b)总线传输速度很快将成为限制内存系统性能的主要因素; (c)第12次地址流仍然包含重要的位置,但它因应用程序而异; (d)随着我们移动到更广泛的公共汽车,行访问时间变得更加突出,从而调查利用可用局部的技术来减少访问时间来重要。

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