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Switching well noise analysis and minimization strategy for low V{sub}th CMOS integrated circuits

机译:低V {SUB} CMOS集成电路的良好噪声分析和最小化策略

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摘要

An accurate equation and solution to estimate Switching Well Noise in CMOS integrated circuits with low V{sub}(th) is proposed. The propagation characteristics of the noise are fully analyzed with a distributed parameter model, which enables us to derive a novel design guideline and layout strategy to minimize Switching Well Noise.
机译:提出了一种准确的方程和解决方案来估计具有低V {SUB}(TH)的CMOS集成电路中的切换良好噪声。通过分布式参数模型完全分析噪声的传播特性,这使我们能够推导出一种新颖的设计指南和布局策略,以最大限度地减少切换良好噪声。

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