首页> 外文会议>International VLSI Multilevel Interconnection Conference >Tunable Low-Shear Copper CMP Pads: Purpose-Built Pad Engineering Solutions
【24h】

Tunable Low-Shear Copper CMP Pads: Purpose-Built Pad Engineering Solutions

机译:可调谐低剪切铜CMP垫:目的 - 内置垫工程解决方案

获取原文

摘要

Novel design concepts for fabrication of low-shear surface-engineered polymeric pads for Copper (Cu) Chemical Mechanical Planarization (CMP) are presented. Purpose built planarization solutions are realized through systematic applications of these design concepts. It is demonstrated that pad polymeric nano-structure containing small (1-2) hard segments in a soft urethane with molecular regularity results in significantly improved polishing performance. Furthermore, such purpose built pad engineering solutions allow for minimal stress incorporation during the bulk copper removal step. Tribological studies are carried out on blanket and patterned Copper films using these novel pads and comparison is made with state of the art commercial pads (IC1000, JSR and Politex). Results indicate i) significant reduction in coefficient of friction (40%) ii) low temperature transients (~1-2°C) iii) large reduction in dishing and erosion (40-60%), iv) significant improvement in topography (60%), v) reduction in Cu overpolish burden (50%), vi) excellent defect performance, vii) a 10x reduction in process-induced stress thus minimizing stress voids and stress induced electromigration and maintaining low-k integrity. These results indicate that it is possible to extend conventional CMP all the way to the 32 nm technology node by using novel pad engineering concepts.
机译:提出了用于制备用于铜(Cu)化学机械平坦化(CMP)的低剪切表面工程聚合物垫的新颖设计概念。目的通过这些设计概念的系统应用实现了建立的平面化解决方案。证明含有小(1-2)的焊盘聚合物纳米结构,在柔软的氨基甲酸甲烷中具有分子规律性的抛光性能显着提高。此外,这种目的的内置垫工程解决方案允许在散装铜去除步骤中进行最小的应力掺入。使用这些新颖的焊盘在毯子和图案化的铜膜上进行摩擦学研究,并使用现有的商业垫(IC1000,JSR和Politex)进行比较。结果表明I)摩擦系数(40%)II)的显着降低了低温瞬变(〜1-2°C)III)凹陷和侵蚀(40-60%),IV的大量降低(40-60%),IV的形貌的显着改善(60 %),v)降低Cu透水负荷(50%),vi)优异的缺陷性能,VII)处理诱导的应力的10倍降低,从而最小化应力空隙和应力诱导的电迁移并保持低k完整性。这些结果表明,通过使用新颖的焊盘工程概念,可以将传统的CMP一直扩展到32nm技术节点。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号