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A Design of Fractional-N Frequency Synthesizer with Quad-Band (700 MHz/AWS/2100 MHz/2600 MHz) VCO for LTE Application in 65 nm CMOS Process

机译:具有四频带(700MHz / AWS / 2100MHz / 2600 MHz / 2600 MHz)VCO的分数-n频率合成器的设计,用于LTE应用中的65 nm CMOS过程

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This paper presents the design of a fractional-N frequency synthesizer for LTE application covering frequency band from 698 MHz to 2690 MHz, which is fabricated in a 65 nm CMOS process. The frequency of VCO was designed from 2.7 GHz to 6.1 GHz by three cores. Each VCO core has the 23 %~40 % tuning range that is obtained by means of a 6-bit binary-weighted capacitance array and a small varactor for fine tuning. Also in order to operate in a wide-band frequency range, AFC technique is used. A 3-bit third order MASH type △ -∑ modulator is employed to meet a frequency resolution of 20 Hz and improve the phase noise performance. The frequency synthesizer measures phase noise of -98 dBc/Hz at 10 KHz offset, -128 dBc/Hz at 5 MHz offset, -131 dBc/Hz at 7.5 MHz offset, integrated phase noise of 0.67° and a settling time of less than 150 us while operating LO frequency at 2.62 GHz. The implemented frequency synthesizer consumes 39 mA from 12 V power supply and meets the requirements of LTE application.
机译:本文介绍了用于LTE应用的分数-N频率合成器的设计,覆盖698MHz至2690 MHz的频带,其在65nm CMOS工艺中制造。 VCO的频率由三个核心从2.7 GHz到6.1 GHz设计。每个VCO核心具有23%〜40%的调谐范围,通过6位二进制加权电容阵列和用于微调的小容纳器获得。而且为了在宽带频率范围内操作,使用AFC技术。采用3位三阶粉碎型△-Σ调制器以满足20Hz的频率分辨率,提高相位噪声性能。频率合成仪测量-98 dBc / hz的相位噪声在10kHz偏移,-128 dBc / hz处为5 MHz偏移,-131 dBc / Hz,为7.5 MHz偏移,集成相位噪声0.67°,稳定时间小于150美国,而在2.62 GHz的情况下运行LO频率。实现的频率合成器从12 V电源消耗39 mA,并满足LTE应用的要求。

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