HIGH-T_c WEAK LINKS (JOSEPHSON JUNCTIONS) MADE BY MATERIAL MODIFICATION

摘要

Recently, "interface engineered" high-T_c Josephson junctions without a barrier have been proposed. In these, after the deposition, the first electrode was treated in a low-energy O~+ or Ar~+ plasma. We show here that their properties can be explained within the framework of our model of SNS weak links, with a normal barrier made by material modification.