Thermal recovery from the mieastabile state of deep lying deect level EL2 in GaAs investigated by piezoelectric photoacoustic technique

摘要

Thermal reovery of the photo-quenched meatatable state of EL2 in semi-insulating GaAs is investigated by using a piezoelectric photoacoustic (PPA) technique frm a non-radiative transition point of view. The isothermal annealing effect of the PPA signal from the quenched stateshows that an activation energy of the recovery is 0.30eV. THis energy is believed to represent the thermal barrier between metastable EL2~* and conduction band. Usefulness of the PPA technique to investigate a non-radiative eletron transition through the defect level is demonstrated.