Oriented Silicon Films on Glass Substrates for Device Applications

摘要

Properties of nanocrystals inside of amorphous silicon films were studied by measuring temperature dependence of conductivity and using HREM and Raman spectroscopy. Formation of nanocrystals in a course of pulse excimer laser treatments was modelled taking into account latent heat of crystallisation. Anisotropy of Raman intensity was detected indicating preferential orientation (110) of separate nanocrystals. Changing of conductivity due to introduction of nanocrystals was shown to achieve several orders of magnitude. Mutual orientation of introduced nanocrystals allowed to obtain oriented (100) textured polysilicon films. AMTFT was manufactured based on structures polysilicon/glass.