Electrical Impedance Spectroscopy (EIS) as a New Characterisation Tool for the Determination of Electrical Material Parameters in Semiconductors and Insulators

摘要

A proper theoretical and experimental analysis of the electrical response (measurement of the complex electrical impedance Z-tilde(ω)) in higher resistivity materials at classical frequencies below 1 GHz has revealed a number of important and interesting results [1]. The EIS experimental method and the subsequent analysis yield, in principle, a whole range of electrical material parameters without usual limitations caused by possible high resistivities of the studied material and/or by nature of electrical contacts. In cases where other methods are applicable, the determination of these parameters would require a whole number of them (examples are 4DCPR, Hall effect, quasi-static C-V, DLTS and others). Some illustrative results obtained from EIS measurements and analysis on pure, single crystal silicon (both n- and p-type variety) are presented.