State of Oxygen and Growth Conditions

摘要

The realationship between the optically active oxygen (carbon) concentration measured by IR-spectroscopy and total oxygen (carbon) concentration measured by a special gas analysis are studied as a function of the growth conditions. The growth conditions to test are the following: CZ growth under an applied magnetic field (different technical decision) and CZ conventional technique which ingots used as control one. The growth conditions used are the same when it is possible to create the vacancies supersaturation. The big amount of vacancies can be realized to relax the stresses in the crystal lattice that arise because of precipitation process and complexes formation during the first hour after crystallization. When carbon content in the samples grown in the presence of axial magnetic field is bigger than 10 ~(17) cm~(-3) the complexes that consist from oxygen interstitials and carbon atoms in the substitutional position begin to form. The behavior of MCZ samples under different heat treatment confirm the specific oxygen position (as a part of some chemical compound, for example) that is impossible to change by conventional annealing that used in the case of the conventional samples. In this paper we analyze the connection between the growth conditions and after annealing behavior of oxygen and carbon in the samples studied. It is shown that by using of magnetic field during silicon single crystal growth it is possible to present not only magnitude of oxygen (carbon) concentration but the further behavior of these ingots during and after various heat treatment.