New Possibility of Impurities Express Determination by Laser Element Spark-Analyzer (LESA)

摘要

It is well known that impurities content and its distribution are the very important parameters for silicon single crystals. These parameters can effect on the yield and efficiency of silicon devices. The problem of their exact determination is now one of the most actual for semiconductor electroics. Laser Element Spark-Analyzer (LESA) is used to solve this problem. LESA spectroscopy based on spectral analysis of laser produced plasma emission and on the "library" of atmic emission lines of more then 70 elements taken from the well-known tables of atomic spectra. The laser spectroscopy metod can become "the magic hy-spy" for the express definition of impurities content in silicon. Using laser spectroscopy it is shown that the impurities striations in the silicon ingots heavily doped with germanium belong to striated distribution of germanium accordinagly to the growth conditions. The striation spacing determined by LESA measurement are in a very good accordance with that determined from X-ray topographs.