Formation of Microscopic Distribution of Grown-In Defects in Czochralski Silicon Crystal

摘要

Studies on point defect diffusion to explain macroscopic distributions of grown-in crystal defects in melt-grown silicon single crystals are reviewed. It is shown that the disagreements among the diffusion equations hitherto proposed by several researchers can be unified in terms of the phenomenological diffusion theory. Interpreting the behavior of the anomalously oxide precipitated zone which is observed in a melt-grown silicon single crystal growth end, it is pointed out that the densities of interstitial and vacancy taken into crystals at the growth interface are greater than their equilibrium ones, and increase with increase in a crystal growth rate.